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FDMC0310AS
FDMC0310AS
MOSFETs FDMC0310AS
onsemi
FDMC0310AS
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC0310AS.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.73
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)500
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)4
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)37
Typical Gate Charge @ Vgs (nC)18@4.5V|37@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)2380@15V
Maximum Drain Source Resistance (mOhm)4.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 19A 8-Pin WDFN EP T/R
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