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FDMC15N06
FDMC15N06
MOSFETs FDMC15N06
onsemi
FDMC15N06
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC15N06.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.75(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePower 33
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NamePower 33
Typical Fall Time (ns)22
Typical Rise Time (ns)36.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)8.8
Typical Gate Charge @ Vgs (nC)8.8@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.5
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)22.5
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Typical Input Capacitance @ Vds (pF)265@25V
Maximum Drain Source Resistance (mOhm)90@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 55V 2.4A 8-Pin Power 33 T/R
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