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FDMC6686P
FDMC6686P
MOSFETs FDMC6686P
onsemi
FDMC6686P
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC6686P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.4(Max)
Package Height0.75(Max)
Package Length3.4(Max)
Product CategoryPower MOSFET
Supplier PackagePower 33 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)178
Typical Rise Time (ns)77
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ Vgs (nC)87@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)317
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)8800@10V
Maximum Drain Source Resistance (mOhm)4@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 18A 8-Pin Power 33 EP T/R
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