Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 3 |
Package Height | 0.75(Max) |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | Power 33 |
Process Technology | TMOS |
Typical Fall Time (ns) | 8.5@Q 2|1.3@Q 1 |
Typical Rise Time (ns) | 1.8@Q 2|3.1@Q 1 |
Supplier Temperature Grade | Commercial |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2500@Q 2|1900@Q 1 |
Typical Gate Charge @ 10V (nC) | 15.7@Q 2|7.3@Q 1 |
Typical Gate Charge @ Vgs (nC) | 7.2@4.5V@Q 2|15.7@10V|3.1@4.5V@Q 1|7.3@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 7.6@Q 2|11@Q 1 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 21@Q 2|35@Q 1 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 13@Q 2|18@Q 1 |
Typical Input Capacitance @ Vds (pF) | 1080@15V@Q 2|495@15V@Q 1 |
Maximum Drain Source Resistance (mOhm) | 10@10V@Q 2|20@10V@Q 1 |
Description |