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FDMC8200S
FDMC8200S
MOSFETs FDMC8200S
onsemi
FDMC8200S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC8200S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackagePower 33
Process TechnologyTMOS
Typical Fall Time (ns)8.5@Q 2|1.3@Q 1
Typical Rise Time (ns)1.8@Q 2|3.1@Q 1
Supplier Temperature GradeCommercial
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500@Q 2|1900@Q 1
Typical Gate Charge @ 10V (nC)15.7@Q 2|7.3@Q 1
Typical Gate Charge @ Vgs (nC)7.2@4.5V@Q 2|15.7@10V|3.1@4.5V@Q 1|7.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.6@Q 2|11@Q 1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)21@Q 2|35@Q 1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13@Q 2|18@Q 1
Typical Input Capacitance @ Vds (pF)1080@15V@Q 2|495@15V@Q 1
Maximum Drain Source Resistance (mOhm)10@10V@Q 2|20@10V@Q 1
Description
Trans MOSFET N-CH Si 30V 18A/13A 8-Pin Power 33 T/R
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