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FDMC86116LZ
FDMC86116LZ
MOSFETs FDMC86116LZ
onsemi
FDMC86116LZ
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC86116LZ.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.75(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePower 33
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)1.4
Typical Rise Time (ns)1.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)4
Typical Gate Charge @ Vgs (nC)4@10V|2@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)10
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.3
Typical Input Capacitance @ Vds (pF)232@50V
Maximum Drain Source Resistance (MOhm)103@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 100V 3.3A 8-Pin Power 33 T/R
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