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FDMC86139P
FDMC86139P
MOSFETs FDMC86139P
onsemi
FDMC86139P
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC86139P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.73
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)4
Typical Rise Time (ns)2.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)16
Typical Gate Charge @ Vgs (nC)16@10V|9.8@6V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)17
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1001@50V
Maximum Drain Source Resistance (mOhm)67@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 4.4A 8-Pin WDFN EP T/R
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