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FDMC86260
FDMC86260
MOSFETs FDMC86260
onsemi
FDMC86260
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC86260.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.4(Max)
Package Height1(Max)
Package Length3.4(Max)
Product CategoryPower MOSFET
Supplier PackagePower 33
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.3
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)9.7@6V|15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.5
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)17
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.4
Typical Input Capacitance @ Vds (pF)1000@75V
Maximum Drain Source Resistance (MOhm)34@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 5.4A 8-Pin Power 33 T/R
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