Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 3.3 |
Package Height | 0.73 |
Package Length | 3.3 |
Product Category | Power MOSFET |
Supplier Package | WDFN EP |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | DFN |
Typical Fall Time (ns) | 5 |
Typical Rise Time (ns) | 8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2300 |
Typical Gate Charge @ 10V (nC) | 29 |
Typical Gate Charge @ Vgs (nC) | 24@8V|29@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 80 |
Typical Turn-Off Delay Time (ns) | 20 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 10.7 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1985@40V |
Maximum Drain Source Resistance (mOhm) | 11.7@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |