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FDMC8678S
FDMC8678S
MOSFETs FDMC8678S
onsemi
FDMC8678S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC8678S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Typical Fall Time (ns)2
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)11@4.5V|24@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Typical Input Capacitance @ Vds (pF)1560@15V
Maximum Drain Source Resistance (mOhm)5.2@10V
Description
Trans MOSFET N-CH Si 30V 15A T/R
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