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FDMD82100
FDMD82100
MOSFETs FDMD82100
onsemi
FDMD82100
--
Diodes, Transistors and Thyristors
MOSFETs
FDMD82100.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
AutomotiveNo
PCB changed12
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.4(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePower 3.3 EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.3
Typical Rise Time (ns)3.2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V|8@6V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.4
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)15
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)805@50V
Maximum Drain Source Resistance (mOhm)19@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 7A 12-Pin Power 3.3 EP T/R
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