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FDMD82100L
FDMD82100L
MOSFETs FDMD82100L
onsemi
FDMD82100L
--
Diodes, Transistors and Thyristors
MOSFETs
FDMD82100L.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
AutomotiveNo
Lead ShapeNo Lead
PCB changed12
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.4(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.9
Typical Rise Time (ns)2.8
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)2|17@10V|8@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.9
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)21
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)1130@50V
Maximum Drain Source Resistance (mOhm)19.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 100V 7A 12-Pin PQFN EP T/R
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