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FDMD84100
FDMD84100
MOSFETs FDMD84100
onsemi
FDMD84100
--
Diodes, Transistors and Thyristors
MOSFETs
FDMD84100.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Triple Drain
Package Width5.1(Max)
Package Height0.75(Max)
Package Length3.4(Max)
Product CategoryPower MOSFET
Supplier PackagePower 3.3 EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.8
Typical Rise Time (ns)2.6
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)11
Typical Gate Charge @ Vgs (nC)7.3@6V|11@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.4
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)14
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)734@50V
Maximum Drain Source Resistance (mOhm)20@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 7A 8-Pin Power 3.3 EP T/R
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