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FDMD8530
FDMD8530
MOSFETs FDMD8530
onsemi
FDMD8530
--
Diodes, Transistors and Thyristors
MOSFETs
FDMD8530.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.75(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)21
Typical Rise Time (ns)13
Number of Elements per Chip2
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)106
Typical Gate Charge @ Vgs (nC)106@10V|50@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)71
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)7425@15V
Maximum Drain Source Resistance (mOhm)1.25@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 35A 8-Pin PQFN EP T/R
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