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FDMD8630
FDMD8630
MOSFETs FDMD8630
onsemi
FDMD8630
--
Diodes, Transistors and Thyristors
MOSFETs
FDMD8630.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Triple Drain Common Source
Package Width6
Package Height0.75(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Typical Fall Time (ns)24
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)97
Typical Gate Charge @ Vgs (nC)46@4.5V|97@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)66
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)38
Typical Input Capacitance @ Vds (pF)7090@15V
Maximum Drain Source Resistance (MOhm)1@10V
Description
Trans MOSFET N-CH 30V 38A 8-Pin PQFN EP T/R
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