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FDMS3610S
FDMS3610S
MOSFETs FDMS3610S
onsemi
FDMS3610S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS3610S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6.25(Max)
Package Height1.05(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePower 56 EP
Maximum IDSS (uA)1@Q 1|500@Q 2
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2@Q 1|4@Q 2
Typical Rise Time (ns)2@Q 1|5@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2200@Q 1|2500@Q 2
Typical Gate Charge @ 10V (nC)26@Q 1|59@Q 2
Typical Gate Charge @ Vgs (nC)26@10V|12@4.5V@Q 1|59@10V|27@4.5V@Q 2
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)7@Q 1|11@Q 2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)23@Q 1|39@Q 2
Maximum Gate Threshold Voltage (V)2@Q 1|2.2@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17.5@Q 1|30@Q 2
Typical Input Capacitance @ Vds (pF)1570@13V@Q 1|4045@13V@Q 2
Maximum Drain Source Resistance (mOhm)5@10V@Q 1|1.8@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 17.5A/30A 8-Pin Power 56 EP T/R
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