Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 6 |
Package Height | 1.05(Max) |
Package Length | 5 |
Product Category | Power MOSFET |
Supplier Package | Power 56 |
Maximum IDSS (uA) | 500@Q 2|1@Q 1 |
Process Technology | TMOS |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 1.8@Q 1|2.4@Q 2 |
Typical Rise Time (ns) | 2.2@Q 1|3.4@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2200@Q 1|2500@Q 2 |
Typical Gate Charge @ 10V (nC) | 37@Q 2|21@Q 1 |
Typical Gate Charge @ Vgs (nC) | 21@10V|37@10V|17@4.5V@Q 2|9.5@4.5V@Q 1 |
Maximum Gate Source Voltage (V) | ±12@Q 2|±20@Q 1 |
Typical Turn-On Delay Time (ns) | 7.7@Q 1|9.2@Q 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 19@Q 1|28@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.7@Q 1|2.2@Q 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 25@Q 2|13@Q 1 |
Typical Input Capacitance @ Vds (pF) | 2515@15V@Q 2|1325@15V@Q 1 |
Maximum Drain Source Resistance (mOhm) | 8@10V@Q 1|2.6@10V@Q 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |