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MOSFETs FDMS7620S-F106
onsemi
FDMS7620S-F106
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.5 |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| Process Technology | TMOS |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 1.4@Q 1|1.5@Q 2 |
| Typical Rise Time (ns) | 1.2@Q 1|1.8@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2200@Q 1|2500@Q 2 |
| Typical Gate Charge @ 10V (nC) | 7.2@Q 1|15.6@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 7.2@10V|3.8@5V@Q 1|15.6@10V|7.9@5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.2@Q 1|6.6@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11.9@Q 1|17.4@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10.1@Q 1|12.4@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 457@15V@Q 1|1050@15V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 20@10V@Q 1|11.2@10V@Q 2 |
| Description |
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