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FDMS8050ET30
FDMS8050ET30
MOSFETs FDMS8050ET30
onsemi
FDMS8050ET30
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS8050ET30.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6.25(Max)
Package Height1.05(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePower 56 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)16
Typical Rise Time (ns)22
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)204
Typical Gate Charge @ Vgs (nC)204@10V|93@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)87
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)55
Typical Input Capacitance @ Vds (pF)16150@15V
Maximum Drain Source Resistance (mOhm)0.65@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R
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