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FDMS86163P
FDMS86163P
MOSFETs FDMS86163P
onsemi
FDMS86163P
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS86163P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.8
Package Height1.05(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6.9
Typical Rise Time (ns)8.8
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)5.3
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)42
Typical Gate Charge @ Vgs (nC)42@10V|26@6V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)501
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.2
Typical Turn-Off Delay Time (ns)33
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.81
Typical Gate to Drain Charge (nC)7.1
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.8
Typical Gate to Source Charge (nC)11.8
Typical Reverse Recovery Time (ns)63
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3070@50V
Typical Reverse Recovery Charge (nC)132
Maximum Drain Source Resistance (MOhm)22@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)100
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)21@50V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)7.9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)125
Description
Trans MOSFET P-CH 100V 7.9A 8-Pin PQFN EP T/R
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