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FDMS86500DC
FDMS86500DC
MOSFETs FDMS86500DC
onsemi
FDMS86500DC
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS86500DC.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.75
Package Height1.05(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePower 56
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8.2
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)3200
Typical Gate Charge @ 10V (nC)76
Typical Gate Charge @ Vgs (nC)76@10V|62@8V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)5775@30V
Maximum Drain Source Resistance (mOhm)2.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 29A 8-Pin Power 56 T/R
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