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FDMS8660S
FDMS8660S
MOSFETs FDMS8660S
onsemi
FDMS8660S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS8660S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height0.99(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePower 56
Standard Package NameQFN
Typical Fall Time (ns)50
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)81
Typical Gate Charge @ Vgs (nC)81@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)76
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)4345@15V
Maximum Drain Source Resistance (MOhm)2.4@10V
Description
Trans MOSFET N-CH Si 30V 25A 8-Pin Power 56 T/R
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