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FDMT800150DC
FDMT800150DC
MOSFETs FDMT800150DC
onsemi
FDMT800150DC
--
Diodes, Transistors and Thyristors
MOSFETs
FDMT800150DC.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width8
Package Height0.9(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9.3
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.5
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)3200
Typical Gate Charge @ 10V (nC)77
Typical Gate Charge @ Vgs (nC)49@6V|77@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)520
Typical Turn-On Delay Time (ns)31
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)4.5
Typical Turn-Off Delay Time (ns)41
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)14
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)25
Typical Reverse Recovery Time (ns)103
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)5860@75V
Typical Reverse Recovery Charge (nC)233
Maximum Drain Source Resistance (MOhm)6.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)561
Maximum Power Dissipation on PCB @ TC=25°C (W)3.2
Typical Reverse Transfer Capacitance @ Vds (pF)17@75V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)15
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)81
Description
Trans MOSFET N-CH Si 150V 15A 8-Pin PQFN EP T/R
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