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FDN358P
FDN358P
MOSFETs FDN358P
onsemi
FDN358P
--
Diodes, Transistors and Thyristors
MOSFETs
FDN358P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOT
Typical Fall Time (ns)2
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ 10V (nC)4
Typical Gate Charge @ Vgs (nC)4@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)56
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.1
Typical Turn-Off Delay Time (ns)12
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.76
Typical Gate to Drain Charge (nC)0.8
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.9
Typical Gate to Source Charge (nC)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)182@15V
Maximum Drain Source Resistance (mOhm)125@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)5
Maximum Power Dissipation on PCB @ TC=25°C (W)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)26@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)270
Description
Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R
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