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FDN537N
FDN537N
MOSFETs FDN537N
onsemi
FDN537N
--
Diodes, Transistors and Thyristors
MOSFETs
FDN537N.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)10
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)6
Typical Gate Charge @ Vgs (nC)6@10V|3@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)19
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)360@15V
Maximum Drain Source Resistance (mOhm)23@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R
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