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FDN5618P
FDN5618P
MOSFETs FDN5618P
onsemi
FDN5618P
--
Diodes, Transistors and Thyristors
MOSFETs
FDN5618P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)4
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ 10V (nC)8.6
Typical Gate Charge @ Vgs (nC)8.6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)16.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.25
Typical Input Capacitance @ Vds (pF)430@30V
Maximum Drain Source Resistance (mOhm)170@10V
Description
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 T/R
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