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FDN5630
FDN5630
MOSFETs FDN5630
onsemi
FDN5630
--
Diodes, Transistors and Thyristors
MOSFETs
FDN5630.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)5
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ 10V (nC)7
Typical Gate Charge @ Vgs (nC)7@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)15
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Typical Input Capacitance @ Vds (pF)400@15V
Maximum Drain Source Resistance (mOhm)100@10V
Description
Trans MOSFET N-CH 60V 1.7A 3-Pin SOT-23 T/R
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