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FDN8601
FDN8601
MOSFETs FDN8601
onsemi
FDN8601
--
Diodes, Transistors and Thyristors
MOSFETs
FDN8601.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)3.4
Typical Rise Time (ns)1.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)3
Typical Gate Charge @ Vgs (nC)3@10V|1.8@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.3
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)7.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Typical Input Capacitance @ Vds (pF)156@50V
Maximum Drain Source Resistance (MOhm)109@10V
Description
Trans MOSFET N-CH 100V 2.7A 3-Pin SOT-23 T/R
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