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FDP22N50N
FDP22N50N
MOSFETs FDP22N50N
onsemi
FDP22N50N
--
Diodes, Transistors and Thyristors
MOSFETs
FDP22N50N.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyUniFET II
Standard Package NameTO-220
Typical Fall Time (ns)35
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)312500
Typical Gate Charge @ 10V (nC)49
Typical Gate Charge @ Vgs (nC)49@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)351
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)500
Typical Gate Plateau Voltage (V)6.4
Typical Turn-Off Delay Time (ns)48
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)19
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)15
Typical Reverse Recovery Time (ns)472
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2456@25V
Typical Reverse Recovery Charge (nC)6500
Maximum Drain Source Resistance (mOhm)220@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)88
Typical Reverse Transfer Capacitance @ Vds (pF)24@25V
Description
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
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