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FDP2D3N10C
FDP2D3N10C
MOSFETs FDP2D3N10C
onsemi
FDP2D3N10C
--
Diodes, Transistors and Thyristors
MOSFETs
FDP2D3N10C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Typical Fall Time (ns)32
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)108
Typical Gate Charge @ Vgs (nC)108@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)42
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)74
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)222
Typical Input Capacitance @ Vds (pF)7980@50V
Maximum Drain Source Resistance (mOhm)2.3@10V
Description
Trans MOSFET N-CH 100V 222A 3-Pin(3+Tab) TO-220 Tube
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