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FDP8D5N10C
FDP8D5N10C
MOSFETs FDP8D5N10C
onsemi
FDP8D5N10C
--
Diodes, Transistors and Thyristors
MOSFETs
FDP8D5N10C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Typical Fall Time (ns)4
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)18
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)76
Typical Input Capacitance @ Vds (pF)1765@10V
Maximum Drain Source Resistance (mOhm)8.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 76A 3-Pin(3+Tab) TO-220 Tube
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