PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 3.9 |
Package Height | 1.5(Max) |
Package Length | 4.9 |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Maximum IDSS (uA) | 1 |
Process Technology | UltraFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 22 |
Typical Rise Time (ns) | 4 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3 |
Minimum Gate Resistance (Ohm) | 0.1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ 10V (nC) | 29 |
Typical Gate Charge @ Vgs (nC) | 29@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 220 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 150 |
Typical Gate Plateau Voltage (V) | 4.4 |
Typical Turn-Off Delay Time (ns) | 44 |
Maximum Diode Forward Voltage (V) | 1.25 |
Typical Gate to Drain Charge (nC) | 6 |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 8 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.9 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2050@25V |
Maximum Drain Source Resistance (mOhm) | 47@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 48@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |
Description | |