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FDS2572
FDS2572
MOSFETs FDS2572
onsemi
FDS2572
--
Diodes, Transistors and Thyristors
MOSFETs
FDS2572.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NameSOP
Typical Fall Time (ns)22
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)29
Typical Gate Charge @ Vgs (nC)29@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)220
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)4.4
Typical Turn-Off Delay Time (ns)44
Maximum Diode Forward Voltage (V)1.25
Typical Gate to Drain Charge (nC)6
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2050@25V
Maximum Drain Source Resistance (mOhm)47@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Typical Reverse Transfer Capacitance @ Vds (pF)48@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)85
Description
Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC T/R
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