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FDS4675
FDS4675
MOSFETs FDS4675
onsemi
FDS4675
--
Diodes, Transistors and Thyristors
MOSFETs
FDS4675.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)60
Typical Rise Time (ns)29
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)40@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)622
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)95
Typical Gate to Drain Charge (nC)13
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)11
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)4350@20V
Maximum Drain Source Resistance (mOhm)13@10V
Description
Trans MOSFET P-CH 40V 11A 8-Pin SOIC T/R
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