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FDS6679
FDS6679
MOSFETs FDS6679
onsemi
FDS6679
--
Diodes, Transistors and Thyristors
MOSFETs
FDS6679.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOP
Typical Fall Time (ns)65
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)71
Typical Gate Charge @ Vgs (nC)71@10V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)972
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)110
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.7
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.6
Typical Gate to Source Charge (nC)12
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3939@15V
Maximum Drain Source Resistance (mOhm)9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)50
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)498@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)13
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)125
Description
Trans MOSFET P-CH 30V 13A 8-Pin SOIC T/R
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