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FDS6900AS
FDS6900AS
MOSFETs FDS6900AS
onsemi
FDS6900AS
--
Diodes, Transistors and Thyristors
MOSFETs
FDS6900AS.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)3|4@Q 1|6@Q 2
Typical Rise Time (ns)15@Q 2|5|9@Q 1|4
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)11@Q 1|10@Q 2
Typical Gate Charge @ Vgs (nC)10@10V@Q 2|11@10V@Q 1
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11@Q 2|10|10@Q 1|9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)16@Q 2|26|14@Q 1|23
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2@Q 2|6.9@Q 1
Typical Input Capacitance @ Vds (pF)570@15V@Q 2|600@15V@Q 1
Maximum Drain Source Resistance (mOhm)22@10V@Q 2|27@10V@Q 1
Description
Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC T/R
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