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FDS89141
FDS89141
MOSFETs FDS89141
onsemi
FDS89141
--
Diodes, Transistors and Thyristors
MOSFETs
FDS89141.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)2.2
Typical Rise Time (ns)1.4
Number of Elements per Chip2
Maximum Power Dissipation (mW)31000
Typical Gate Charge @ 10V (nC)5.1
Typical Gate Charge @ Vgs (nC)5.1@10V|2.9@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)9.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5
Typical Input Capacitance @ Vds (pF)299@50V
Maximum Drain Source Resistance (mOhm)62@10V
Description
Trans MOSFET N-CH 100V 3.5A 8-Pin SOIC T/R
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