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MOSFETs FDS8949-XSN00247
onsemi
FDS8949-XSN00247
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Product Category | Power MOSFET |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 3 |
| Typical Rise Time (ns) | 5 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 7.7@5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 715@20V |
| Maximum Drain Source Resistance (MOhm) | 29@10V |
| Description |
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