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FDT3612
FDT3612
MOSFETs FDT3612
onsemi
FDT3612
--
Diodes, Transistors and Thyristors
MOSFETs
FDT3612.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyTMOS
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4.5
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Typical Input Capacitance @ Vds (pF)632@50V
Maximum Drain Source Resistance (MOhm)120@10V
Description
Trans MOSFET N-CH 100V 3.7A 4-Pin(3+Tab) SOT-223 T/R
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