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FDT434P
FDT434P
MOSFETs FDT434P
onsemi
FDT434P
--
Diodes, Transistors and Thyristors
MOSFETs
FDT434P.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)30
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)13@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)270
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)45
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.75
Typical Gate to Drain Charge (nC)3
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)0.4
Typical Gate Threshold Voltage (V)0.6
Typical Gate to Source Charge (nC)1.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1187@10V
Maximum Drain Source Resistance (MOhm)50@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)30
Maximum Power Dissipation on PCB @ TC=25°C (W)3
Typical Reverse Transfer Capacitance @ Vds (pF)114@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)6
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)110
Description
Trans MOSFET P-CH 20V 6A 4-Pin(3+Tab) SOT-223 T/R
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