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FDT4N50NZU
FDT4N50NZU
MOSFETs FDT4N50NZU
onsemi
FDT4N50NZU
--
Diodes, Transistors and Thyristors
MOSFETs
FDT4N50NZU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingReel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Product CategoryPower MOSFET
Process TechnologyUniFET II
Typical Fall Time (ns)15
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)9.1
Typical Gate Charge @ Vgs (nC)9.1@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)34
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)476@25V
Maximum Drain Source Resistance (MOhm)3000@10V
Description
Trans MOSFET N-CH 500V 2A Reel
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