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FDT86102LZ
FDT86102LZ
MOSFETs FDT86102LZ
onsemi
FDT86102LZ
--
Diodes, Transistors and Thyristors
MOSFETs
FDT86102LZ.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.2
Typical Rise Time (ns)1.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)8.3@4.5V|17@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)181
Typical Turn-On Delay Time (ns)6.6
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)2.2
Typical Turn-Off Delay Time (ns)19
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.82
Typical Gate to Drain Charge (nC)2.2
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.4
Typical Gate to Source Charge (nC)2.6
Typical Reverse Recovery Time (ns)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1118@50V
Typical Reverse Recovery Charge (nC)36
Maximum Drain Source Resistance (MOhm)28@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)40
Maximum Power Dissipation on PCB @ TC=25°C (W)2.2
Typical Reverse Transfer Capacitance @ Vds (pF)7.5@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)55
Description
Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R
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