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FDT86256
FDT86256
MOSFETs FDT86256
onsemi
FDT86256
--
Diodes, Transistors and Thyristors
MOSFETs
FDT86256.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Standard Package NameSOT
Typical Fall Time (ns)2.6
Typical Rise Time (ns)1.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)1.2
Typical Gate Charge @ Vgs (nC)1.2@10V|0.8@6V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)2.7
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)4.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.2
Typical Input Capacitance @ Vds (pF)55@75V
Maximum Drain Source Resistance (mOhm)845@10V
Description
Trans MOSFET N-CH Si 150V 1.2A 4-Pin(3+Tab) SOT-223 T/R
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