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FF08MR12W1MA1B11ABPSA1
FF08MR12W1MA1B11ABPSA1
MOSFETs FF08MR12W1MA1B11ABPSA1
Infineon
FF08MR12W1MA1B11ABPSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MaterialSiC
ECCN (US)EAR99
AutomotiveUnknown
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Typical Fall Time (ns)38
Typical Rise Time (ns)35
Number of Elements per Chip2
Typical Gate Charge @ Vgs (nC)495@15V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)53
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)146
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)150
Typical Input Capacitance @ Vds (pF)16000@600V
Maximum Drain Source Resistance (MOhm)9.8@15V
Description
Trans MOSFET N-CH SiC 1.2KV 150A Automotive
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