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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1
MOSFETs FF11MR12W1M1B11BOMA1
Infineon
FF11MR12W1M1B11BOMA1
--
Diodes, Transistors and Thyristors
MOSFETs
FF11MR12W1M1B11BOMA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MaterialSiC
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveNo
PCB changed18
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-2
Typical Fall Time (ns)28
Typical Rise Time (ns)16.4
Number of Elements per Chip2
Maximum Power Dissipation (mW)20
Typical Gate Charge @ Vgs (nC)248@15V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)25.1
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)64.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)7360@800V
Maximum Drain Source Resistance (mOhm)11.3(Typ)@15V
Description
Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray
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