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FF2MR12W3M1HB11BPSA1
FF2MR12W3M1HB11BPSA1
MOSFETs FF2MR12W3M1HB11BPSA1
Infineon
FF2MR12W3M1HB11BPSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
MaterialSiC
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Product CategoryPower MOSFET
Typical Fall Time (ns)32.2
Typical Rise Time (ns)137
Supplier Temperature GradeIndustrial
Number of Elements per Chip4
Typical Gate Charge @ Vgs (nC)1600@18V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)108
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)136
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)400
Typical Input Capacitance @ Vds (pF)48400@800V
Maximum Drain Source Resistance (MOhm)2.27@18V
Description
Trans MOSFET N-CH SiC 1.2KV 400A
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