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MOSFETs FF45MR12W1M1B11BOMA1
Infineon
FF45MR12W1M1B11BOMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Maximum IDSS (uA) | 120 |
| Typical Fall Time (ns) | 16.4 |
| Typical Rise Time (ns) | 6.3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 20 |
| Typical Gate Charge @ Vgs (nC) | 62@15V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 8.2 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 35.2 |
| Maximum Gate Threshold Voltage (V) | 5.55 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 25 |
| Typical Input Capacitance @ Vds (pF) | 1840@800V |
| Maximum Drain Source Resistance (MOhm) | 45(Typ)@15V |
| Maximum Gate Source Leakage Current (nA) | 400 |
| Description |
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