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FF6MR12W2M1B70BPSA1
FF6MR12W2M1B70BPSA1
MOSFETs FF6MR12W2M1B70BPSA1
Infineon
FF6MR12W2M1B70BPSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MaterialSiC
MountingScrew
ECCN (US)EAR99
Pin Count35
AutomotiveNo
PCB changed35
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width56.7
Package Height12.25
Package Length62.8
Supplier PackageAG-EASY2B
Process TechnologyTMOS
Typical Fall Time (ns)30
Typical Rise Time (ns)18.7
Number of Elements per Chip2
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)20.5
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)62.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)200
Typical Input Capacitance @ Vds (pF)14700@800V
Maximum Drain Source Resistance (MOhm)5.63(Typ)@15V
Description
Trans MOSFET N-CH SiC 1.2KV 200A 35-Pin AG-EASY2B Tray
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