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FQA28N15
FQA28N15
MOSFETs FQA28N15
onsemi
FQA28N15
--
Diodes, Transistors and Thyristors
MOSFETs
FQA28N15.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)115
Typical Rise Time (ns)180
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ 10V (nC)40
Typical Gate Charge @ Vgs (nC)40@10V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)260
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)100
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)20
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)7.9
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1250@25V
Typical Reverse Recovery Charge (nC)400
Maximum Drain Source Resistance (mOhm)90@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)132
Typical Reverse Transfer Capacitance @ Vds (pF)50@25V
Description
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-3P Tube
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