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FQA32N20C
FQA32N20C
MOSFETs FQA32N20C
onsemi
FQA32N20C
--
Diodes, Transistors and Thyristors
MOSFETs
FQA32N20C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)210
Typical Rise Time (ns)270
Number of Elements per Chip1
Maximum Power Dissipation (mW)204000
Typical Gate Charge @ 10V (nC)82.5
Typical Gate Charge @ Vgs (nC)82.5@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)245
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Typical Input Capacitance @ Vds (pF)1700@25V
Maximum Drain Source Resistance (mOhm)82@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-3P Tube
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