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FQA55N10
FQA55N10
MOSFETs FQA55N10
onsemi
FQA55N10
--
Diodes, Transistors and Thyristors
MOSFETs
FQA55N10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.16(Max)
Package Height21.3(Max)
Package Length16.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Standard Package NameTO-3P
Typical Fall Time (ns)140
Typical Rise Time (ns)250
Number of Elements per Chip1
Maximum Power Dissipation (mW)190000
Typical Gate Charge @ 10V (nC)75
Typical Gate Charge @ Vgs (nC)75@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)110
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)61
Typical Input Capacitance @ Vds (pF)2100@25V
Maximum Drain Source Resistance (mOhm)26@10V
Description
Trans MOSFET N-CH 100V 61A 3-Pin(3+Tab) TO-3P Rail
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