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FQAF11N90C
FQAF11N90C
MOSFETs FQAF11N90C
onsemi
FQAF11N90C
--
Diodes, Transistors and Thyristors
MOSFETs
FQAF11N90C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.7(Max)
Package Height26.7(Max)
Package Length15.7(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3PF
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-3PF
Typical Fall Time (ns)85
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Typical Gate Charge @ 10V (nC)60
Typical Gate Charge @ Vgs (nC)60@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)60
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)130
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)2530@25V
Maximum Drain Source Resistance (mOhm)1100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PF Tube
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